N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low c

文件：113.75 Kbytes 页数：4 Pages

AOSMD

万国半导体

20V N-Channel MOSFET

General Description The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 20V ID (at VGS=4

文件：239.18 Kbytes 页数：6 Pages

AOSMD

万国半导体

Hex Inverting Gates

General Description This device contains six independent gates each of which performs the logic INVERT function.

文件：45.44 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Hex Inverting Gates

General Description This device contains six independent gates each of which performs the logic INVERT function.

文件：45.44 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司