Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets R

文件：249.16 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets R

文件：249.16 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets ROH   VDS (V) = 20V\n  ID = 8A (VGS = 4.5V)\n  RDS(ON);

AOS

美国万代

Dual N-Channel Enhancement Mode MOSFET

文件：371.77 Kbytes 页数：5 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：71.11 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Power MOSFETs from APEC provide the designer with the best combination of fast switching

文件：82.49 Kbytes 页数：6 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商