N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identica

文件：143.06 Kbytes 页数：6 Pages

AOSMD

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Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

文件：107.24 Kbytes 页数：5 Pages

AOSMD

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40V N-Channel MOSFET

文件：292.55 Kbytes 页数：6 Pages

AOSMD

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N-Channel 4 -V (D-S) MOSFET

文件：1.00541 Mbytes 页数：8 Pages

VBSEMI

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