N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB436 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB436 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

文件：132.56 Kbytes 页数：5 Pages

AOSMD

万国半导体

200MHz, 짹15V, Low-Power Voltage Feedback Op Amp

文件：119.26 Kbytes 页数：6 Pages

NSC

国半

200MHz, 짹15V, Low-Power Voltage Feedback Op Amp

文件：119.26 Kbytes 页数：6 Pages

NSC

国半

NPN SILICON EPIBASE TRANSISTORS

NPN Silicon Epibase Transistors

文件：180.98 Kbytes 页数：5 Pages

SIEMENS

西门子