N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB440 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOB440 is Pb-free (meets ROHS & Sony 259 specifications). Features V

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AOSMD

万国半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 75A@ TC=25℃ • Drain Source Voltage- : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ (Max) • 100 avalanche tested • Minimum

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ISC

无锡固电

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Plastic Medium Power Silicon PNP Transistor

4.0 AMPERES POWER TRANSISTORS PNP SILICON . . . for amplifier and switching applications. Complementary types are BD437 and BD441.

文件：111.37 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS PNP SILICON

4.0 AMP POWER TRANSISTORS PNP SILICON This series of plastic, medium−power silicon PNP transistors can be used for for amplifier and switching applications. Complementary types are BD437 and BD441. Features • Pb−Free Packages are Available*

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ONSEMI

安森美半导体

High-Speed, Low-Power, Voltage Feedback Op Amp

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NSC

国半