丝印：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

文件：1.03889 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=7A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：310.45 Kbytes 页数：2 Pages

ISC

无锡固电

600V 7A a MOS Power Transistor

General Description The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability thes

文件：295.33 Kbytes 页数：7 Pages

AOSMD

万国半导体

600V 7A a MOS Power Transistor

General Description The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche c

文件：293.19 Kbytes 页数：6 Pages

AOSMD

万国半导体