Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOC2802 uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load swit

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AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 5 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Good radiant power output linearity with respect to input current ● Long lifet

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PANASONIC

松下

Low-Power BiCMOS Current-Mode PWM

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TI

德州仪器

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

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STMICROELECTRONICS

意法半导体