80V N-Channel MOSFET

文件：275.43 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：299.42 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Band-switching diodes

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance:

文件：33.64 Kbytes 页数：5 Pages

PHI

PHI

HALL.EFFECT PICKUP IGNITION CONTROLLER

DESCRIPTION The L482 is an integrated circuit designed for use with an NPN darlington in breakerless ignition systems with hall-effect pickup sensors and high energy ignition coils. It controls the energy stored in the ignition coil and the desaturation time of the external darlington to lim

文件：169.22 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Round.Top View Type

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PANASONIC

松下