Band-switching diodes

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance:

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PHI

飞利浦

Band-switching diodes

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode Switching 35V 0.1A 2-Pin DO-34

NJS

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)

NPN Silicon RF Transistor • For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA • fT = 8 GHz F = 1.2 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：53.41 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA • fT = 8 GHz F = 1.2 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：62.16 Kbytes 页数：6 Pages

Infineon

英飞凌

256-Word Color Palette 15-, 16-, and 24-bit True Color Power-Down RAMDACs“

Features 85 and 75 MHz Operation Supports 8:8:8:8, 24-bit True Color and VGA Overlay Supports 8:8:8 24-bit True-Color Format Supports 5:6:5 XGA True-Color Format Supports 5:5:5 TARGA True-Color Format 32x32x2 User-Definable Hardware Cursor Bt4711475/476/477/478 Pin Compatible Power-On-R

文件：2.52179 Mbytes 页数：35 Pages

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