30V P-Channel MOSFET

General Description The AOC2401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a12V VGS(MAX) rating. Product Summary VDS -30V ID(at VGS =-10V)

文件：253.23 Kbytes 页数：5 Pages

AOSMD

万国半导体

MOSFET：P-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

8V P-Channel MOSFET

General Description The AON2401 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS -8V ID (at V

文件：245.83 Kbytes 页数：5 Pages

AOSMD

万国半导体

DUAL LDO REGULATORS

文件：829.7 Kbytes 页数：22 Pages

BCDSEMI

新进半导体

DUAL LDO REGULATORS

文件：747.92 Kbytes 页数：22 Pages

BCDSEMI

新进半导体