N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS

文件：128.25 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430Y is Pb free, inside an

文件：131.41 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430Y is Pb free, inside an

文件：131.41 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications). Fea

文件：80.21 Kbytes 页数：5 Pages

AOSMD

万国半导体