N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications). Fea

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AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=80A@ TC=25℃ • Drain Source Voltage- : VDSS=75V(Min) • Static Drain-Source On-Resistance : RDS(on) = 11.5mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

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ISC

无锡固电

N-Channel 80 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters • LED Backlighting

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VBSEMI

微碧半导体

中压MOSFET (40V - 400V)

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

TO-220 MOS FETs 场效应管

GSME

桂微