Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

文件：107.24 Kbytes 页数：5 Pages

AOSMD

万国半导体

40V N-Channel MOSFET

文件：292.55 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：293.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 4 -V (D-S) MOSFET

文件：1.00541 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：2.73793 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：AOD4184A；Package：TO-252-3L；40V N-Channel MOSFET

Features Vds=60V, ID=53A RDS(ON)12m0@VGS=10V RDS(ON) 17m@VGS-4.5V

文件：1.4766 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

40V N-Channel MOSFET

类型: N沟道 漏源电压(Vdss): 40V 连续漏极电流(Id): 60A

XBLW

芯伯乐

场效应管

HXY MOSFET

华轩阳电子

MOSFET

MTW

美台微

40V N-Channel MOSFET

General Description The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is well suited for high current load applications. Product Summary VDS 40V ID(at VGS=10V) 50A RDS(ON)(at VGS=10V)

文件：237.86 Kbytes 页数：6 Pages

AOSMD

万国半导体