N-Channel Enhancement Mode Field Effect Transistor

General Description The AOA400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AOA400A400 is Pb-free (meets ROHS & Sony 259

文件：114.33 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOA400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AOA400A400 is Pb-free (meets ROHS & Sony 259

文件：114.33 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD400 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

文件：132.14 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：215.43 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU ​​​​​​​ APPLICATIONS • OR-ing • Server • DC/DC

文件：1.01516 Mbytes 页数：8 Pages

VBSEMI

微碧半导体