Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and\noperation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX)rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its VDS(V) = 30V\nID= 6.4A\nRDS(ON) < 24mΩ(VGS= 10V)\nRDS(ON)< 30mΩ(VGS= 4.5V)\nRDS(ON)< 40mΩ(VGS= 2.5V)\nRDS(ON)< 70mΩ(VGS= 1.8V);

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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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包装：散装 类别：焊接，拆焊，返修产品 烙铁，镊子，手柄 描述：8800 SELF CONTAINED DESOLDERING

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