Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swit

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AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：200.93 Kbytes 页数：5 Pages

AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：200.93 Kbytes 页数：5 Pages

AOSMD

万国半导体