Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications).

文件：112.45 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

文件：1.69773 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications).

文件：112.45 Kbytes 页数：4 Pages

AOSMD

万国半导体

低压MOSFET (12V - 30V)

Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代