N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low c

文件：110.97 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

General Description The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in general purpose applications. Features VDS(V) = 30V ID= 23A (VGS= 10V) RDS(ON)

文件：242.69 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

General Description The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in general purpose applications. Features VDS(V) = 30V ID= 23A (VGS= 10V) RDS(ON)

文件：242.69 Kbytes 页数：4 Pages

AOSMD

万国半导体

Quad 2-Input AND Gates

General Description This device contains four independent gates each of which performs the logic AND function.

文件：32.92 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司