Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8846 is Pb-free (

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AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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