Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. St

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AOSMD

万国半导体

沟槽型功率MOS

TWGMC

台湾迪嘉

Dual N-Channel Enhancement Mode MOSFET

Application Battery protection Battery Powered Systems « Power management » Motor Control » Portable Power Adaptors

文件：3.16136 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Plastic-Encapsulate MOSFETS

DESCRIPTION DS(ON) The BCL8810KDW uses advanced trench technology to provide excellent R and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.

文件：1.21436 Mbytes 页数：4 Pages

GWSEMI

唯圣电子

N-channel Double MOSFET in a SOT23-6 Plastic Package

文件：1.43691 Mbytes 页数：9 Pages

FOSHAN

蓝箭电子