Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8806 is Pb-free (meets ROH

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AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：114.11 Kbytes 页数：4 Pages

AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：114.11 Kbytes 页数：4 Pages

AOSMD

万国半导体