Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pb free (meets ROH

文件：109.46 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch

文件：1.44442 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Dual P-Channel Enhancement Mode Field Effect Transistor

XW

芯微半导体

20V P-Channel MOSFET

General Description The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -20V

文件：355.44 Kbytes 页数：5 Pages

AOSMD

万国半导体

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pb free (meets ROH

文件：109.46 Kbytes 页数：4 Pages

AOSMD

万国半导体

P沟道MOSFET (8V - 60V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。

AOS

美国万代