20V P-Channel MOSFET

General Description The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -20V

文件：355.44 Kbytes 页数：5 Pages

AOSMD

万国半导体

P沟道MOSFET (8V - 60V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。

AOS

美国万代

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pb free (meets ROH

文件：109.46 Kbytes 页数：4 Pages

AOSMD

万国半导体

500mA LED Step-Down Converter

文件：158.56 Kbytes 页数：11 Pages

DIODES

美台半导体

500mA LED Step-down Converter

文件：154.68 Kbytes 页数：11 Pages

DIODES

美台半导体