Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. Features VDS (

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AOSMD

万国半导体

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：981.75 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch.   VDS (V) = 20V\n  ID = 7A\n  RDS(ON) < 26mΩ (VGS = 4.5V)\n  RDS(ON) < 33mΩ (VGS = 2.5V)\n  RDS(ON) < 42mΩ (VGS = 1.8V) ;

AOS

美国万代

20V Dual N-Channel MOSFET

JGSEMI

金锆半导体