Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications).

文件：112.45 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its

文件：112.07 Kbytes 页数：4 Pages

AOSMD

万国半导体

Ultra-Low Capacitance TVS Diode

General Description The AOZ8808 is a transient voltage suppressor array designed to protect high speed data lines such as HDMI, USB 3.0, MDDI, SATA, and Gigabit Ethernet from damaging ESD events. This device incorporates eight surge rated, low capacitance steering diodes and a TVS in a single pa

文件：379.32 Kbytes 页数：8 Pages

AOSMD

万国半导体

COMBINATION MOTOR DRIVER WITH DC-DC CONVERTER

文件：1.15978 Mbytes 页数：38 Pages

TI

德州仪器