Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switc

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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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