Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO8807 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical. - RoHS Compliant - Halogen Free Feature

文件：2.06705 Mbytes 页数：5 Pages

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文件：915.49 Kbytes 页数：6 Pages

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AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

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