Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. St

文件：117.18 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

文件：963.39 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

20V Common-Drain Dual N-Channel MOSFET

文件：221.93 Kbytes 页数：5 Pages

AOSMD

万国半导体

场效应管

HXY MOSFET

华轩阳电子

Dual N -Channel MOSFET

XW

芯微半导体

场效应管(MOSFET)

TDSEMIC

拓电半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. St

文件：117.18 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode MOSFET

Application Battery protection Battery Powered Systems « Power management » Motor Control » Portable Power Adaptors

文件：3.16136 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

20V Common-Drain Dual N-Channel MOSFET

文件：221.93 Kbytes 页数：5 Pages

AOSMD

万国半导体