Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8803 is Pb-free (meets

文件：117.82 Kbytes 页数：4 Pages

AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8803 is Pb-free (meets

文件：117.82 Kbytes 页数：4 Pages

AOSMD

万国半导体

10/15 CH PLL

文件：109.97 Kbytes 页数：9 Pages

SAMSUNG

三星

10/15 CH PLL

文件：109.97 Kbytes 页数：9 Pages

SAMSUNG

三星

LIGHT EMITTING DIODE DRIVER

DESCRIPTION The block Diagram of the SA8803 is shown in Fig. 1. A control word is clocked into the device via the DATA pin with a local clock provided to pin CLK. The control word comprises a 3-bit chip address, a 5-bit LED address and a Status (on/off) bit. Provided that the Chip Adress matches

文件：84.54 Kbytes 页数：10 Pages

SAMES