N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7410 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO7410 is Pb-free (meets ROHS & Sony 259

文件：111.12 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

General Description The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. Features VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON)

文件：201.96 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET uses advanced trench technology

文件：597.39 Kbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel 30-V (D-S) MOSFET

文件：1.02087 Mbytes 页数：8 Pages

VBSEMI

微碧半导体