P-Channel Enhancement Mode Field Effect Transistor

General Description The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8403 is Pb-free (meets ROH

文件：109.94 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8403 is Pb-free (meets ROH

文件：109.94 Kbytes 页数：4 Pages

AOSMD

万国半导体

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bel

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爱特梅尔爱特梅尔公司

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