Complementary Enhancement Mode Field Effect Transistor

General Description The AO7600/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. AO7600 and

文件：145.9 Kbytes 页数：7 Pages

AOSMD

万国半导体

N- and P- Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices

文件：1.96125 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Complementary Enhancement Mode Field Effect Transistor

文件：139.83 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

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MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代