Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with th

文件：697.7 Kbytes 页数：8 Pages

AOSMD

万国半导体

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the sy   FET1                         FET2\n  VDS (V) = 30V            VDS(V) = 30V\n  ID = 9.5A                  ID=9A (VGS = 10V)\n  RDS(ON) UIS TESTED!\nRg,Ciss,Coss,Crss Tested;

AOS

美国万代

Standard CMOS Voltage Detector IC

文件：269.09 Kbytes 页数：10 Pages

ROHM

罗姆

Standard CMOS Voltage Detector IC

文件：269.09 Kbytes 页数：10 Pages

ROHM

罗姆

Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

文件：507.55 Kbytes 页数：18 Pages

ROHM

罗姆