丝印：42**；Package：SOT-26；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6402A/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the s

文件：279.45 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON)

文件：1.62084 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：42KL；Package：SOT23-6；30V N-Channel MOSFET

Features VDS (V) = 30V ID = 7.5A (VGS = 10V) RDS(ON)

文件：484.5 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：42KLU50；Package：SOT23-6；30V N-Channel MOSFET

General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass th

文件：375.22 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：42**；Package：SOT-26；30V N-Channel MOSFET

文件：224.21 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON)

文件：1.93437 Mbytes 页数：4 Pages

KEXIN

科信电子

30V N-Channel MOSFET

文件：224.21 Kbytes 页数：5 Pages

AOSMD

万国半导体

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

AOS

美国万代

30V N MOSFET

JGSEMI

台湾金锆

N-Channel 30V (D-S) MOSFET

N-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical\napplications are power switch, power management in portable and bat

恩XP

恩智浦