Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

文件：137.29 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800E uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

文件：129.37 Kbytes 页数：4 Pages

AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

文件：132.4 Kbytes 页数：4 Pages

AOSMD

万国半导体

DE-COMPRESSION VOICE IC

CHIP FEATURES. ● DUAL OPERATION FREQUENCIES: - 32.768 KHZ & 0.5 SECOND TIMER INTERRUPT. - BUILT-IN PLL CIRCUIT TO GENERATE SYSTEM CLOCK MAX 20MHZ. ● BUILT-IN 2KBYTES(1K*16) RAM. ● ADDRESS UP TO 8MBYTE(4M*16) RAM OR ROM OR “ROM AND RAM” BUILT-IN 16KBYTE(8K*16) PROGRAM ROM AND 0.5

文件：261.26 Kbytes 页数：10 Pages

APLUS

巨华

PLL Module

文件：156.63 Kbytes 页数：1 Pages

ASB