AON5800

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAON5800usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8Vwhileretaininga12VVGS(MAX)rating.ItisESDprotected.Thisdeviceissuitableforuseasauni-directionalorbi-directionalloadswi

APC5800E

DE-COMPRESSIONVOICEIC

CHIPFEATURES. ●DUALOPERATIONFREQUENCIES: -32.768KHZ&0.5SECONDTIMERINTERRUPT. -BUILT-INPLLCIRCUITTOGENERATESYSTEMCLOCKMAX20MHZ. ●BUILT-IN2KBYTES(1K*16)RAM. ●ADDRESSUPTO8MBYTE(4M*16)RAMORROMOR“ROMANDRAM” BUILT-IN16KBYTE(8K*16)PROGRAMROMAND0.5

APL5800

PLLModule

BA5800A

Li-SO2primarybatterysystem

CA5800C

TheRFLineWidebandLinearAmplifiers

CA5800CS

TheRFLineWidebandLinearAmplifiers

F5800

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

FDB5800

N-ChannelLogicLevelPowerTrenchMOSFET

FDB5800

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FDP5800

N-ChannelLogicLevelPowerTrenchMOSFET