| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AO6601 | Complementary Enhancement Mode Field Effect Transistor GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | |
AO6601 | N- and P-Channel V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
AO6601 | Complementary Trench MOSFET ■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
AO6601 | N P Channel MOSFET Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V) | UMWUMW 友台友台半导体 |  | |
AO6601 | 30V Complementary MOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | |
Complementary Trench MOSFET ■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | ||
Complementary Enhancement Mode Field Effect Transistor GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | ||
30V Complementary MOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | ||
ComfortProbewithRemovable4mmBananaPlugAdapter | POMONA Pomona Electronics |  | ||
750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | ||
1200MHzto3600MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | ||
750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | ||
LowNoiseJFETAmplifiers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule | ANADIGICS ANADIGICS |  | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
P-Channel60V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | |
详细参数
- 型号：
AO6601
- 功能描述：
MOSFET N/P-CH COMPL 30V 6-TSOP
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 阵列
- 系列：
-
- 产品目录绘图：
8-SOIC Mosfet Package
- 标准包装：
1
- 系列：
- FET
- 型：
2 个 N 沟道（双） FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
60V 电流 - 连续漏极(Id) @ 25°
- C：
3A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
75 毫欧 @ 4.6A，10V Id 时的
- Vgs(th)（最大）：
3V @ 250µA 闸电荷(Qg) @
- Vgs：
20nC @ 10V 输入电容(Ciss) @
- Vds：
- 功率 -
- 最大：
1.4W
- 安装类型：
表面贴装
- 封装/外壳：
PowerPAK? SO-8
- 供应商设备封装：
PowerPAK? SO-8
- 包装：
Digi-Reel®
- 产品目录页面：
1664(CN2011-ZH PDF)
- 其它名称：
SI7948DP-T1-GE3DKR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS美国万代 |
24+ |
TSOP-6/SOT23-6 |
888000 |
AOS代理商 优势现货美国万代全系列MOS管 |
询价 | ||
AOS |
22+ |
SOT-163 |
2655 |
原装正品!公司现货热卖! |
询价 | ||
ALPHA |
21+ |
SOT23-6 |
30000 |
只做正品原装现货 |
询价 | ||
AOS/万代 |
21+ |
SOT23-6 |
34000 |
原装现货,一站式配套 |
询价 | ||
AOS/万代 |
22+ |
SOT23-6 |
98800 |
欢迎来电咨询 只做原装 |
询价 | ||
AO |
23+ |
TSOP-6 |
45000 |
热卖优势现货 |
询价 | ||
AOS/万代 |
23+ |
TSOP6 |
10000 |
绝对全新原装现货特价销售,欢迎来电查询 |
询价 | ||
AO |
1912+ |
SOT-163 |
16850 |
绝对原装现货 |
询价 | ||
AOS |
16/17+ |
TSSOP-6 |
7709 |
AOS现货库存长期供应 |
询价 | ||
AOS |
18+ |
TSOP-6 |
9800 |
一级代理/全新原装现货/长期供应! |
询价 |
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