AO6601-HF

Complementary Trench MOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

AO6601L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AWU6601

HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule

AX6601

300mALowDropout(LDO)LinearRegulator

GENERALDESCRIPTION TheAX6601isa300mA,fixedoutputvoltage,lowdropoutlinearregulator.TheDeviceincludespasselement,erroramplifier,band-gap,current-limit,andthermalshutdowncircuitry.Thecharacteristicsoflowdropoutvoltageandlessquiescentcurrentmakeitgoodforsome

CEB6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEB6601

P-Channel60V(D-S)MOSFET

CED6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CEM6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM6601

P-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested