Complementary Trench MOSFET

■ Features N-Channel : ● VDS (V) = 30V ● ID = 3.4 A (VGS = 10V) ● RDS(ON)

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KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6

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AOSMD

万国半导体

HELP3TM Band 1 / WCDMA / TD-SCDMA 3.4 V / 28.25 dBm Linear PA Module

文件：622.02 Kbytes 页数：14 Pages

ANADIGICS

ANADIGICS, Inc

300mA Low Dropout (LDO) Linear Regulator

 GENERAL DESCRIPTION The AX6601 is a 300mA, fixed output voltage, low dropout linear regulator. The Device includes pass element, error amplifier, band-gap, current-limit, and thermal shutdown circuitry. The characteristics of low dropout voltage and less quiescent current make it good for some

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AXELITE

亚瑟莱特