Complementary Enhancement Mode Field Effect Transistor

General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6

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AOSMD

万国半导体

HELP3TM Band 1 / WCDMA / TD-SCDMA 3.4 V / 28.25 dBm Linear PA Module

文件：622.02 Kbytes 页数：14 Pages

ANADIGICS

ANADIGICS, Inc

300mA Low Dropout (LDO) Linear Regulator

 GENERAL DESCRIPTION The AX6601 is a 300mA, fixed output voltage, low dropout linear regulator. The Device includes pass element, error amplifier, band-gap, current-limit, and thermal shutdown circuitry. The characteristics of low dropout voltage and less quiescent current make it good for some

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AXELITE

亚瑟莱特

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

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CET

华瑞