Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pb free (meets ROHS & Sony 259 specifications). AO4816L is a Green Produc

文件：135.52 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pb free (meets ROHS & Sony 259 specifications).\nAO4816L is a Green Product orde VDS (V) = 30V\nID = 8.5A\nRDS(ON) < 17mΩ (VGS = 20V)\nRDS(ON) < 20mΩ (VGS = 10V)\nRDS(ON) < 46mΩ (VGS = 4.5V);

AOS

美国万代

Low Voltage Standard CMOS Voltage Detector IC Series

文件：266.76 Kbytes 页数：9 Pages

ROHM

罗姆

Low Voltage Standard CMOS Voltage Detector ICs

文件：290.68 Kbytes 页数：9 Pages

ROHM

罗姆

WSILICON MONOLITHIC INTEGRATDE CIRCUIT

文件：295.75 Kbytes 页数：6 Pages

ROHM

罗姆