Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4904 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：149.18 Kbytes 页数：5 Pages

AOSMD

万国半导体

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

文件：68.36 Kbytes 页数：2 Pages

CDI-DIODE

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

文件：68.36 Kbytes 页数：2 Pages

CDI-DIODE

40V N-Channel MOSFETs

General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanch

文件：890.12 Kbytes 页数：5 Pages

POTENS

博盛半导体