P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. It may be used in common-drain configuration to form a bidirectional blocking switch. AO6403 is Pb

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AOSMD

万国半导体

30V P-Channel MOSFET

文件：237.24 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Power Transistor

General Description The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. - RoHS Compliant - Halogen Free Product Summary VDS -30V ID (at VGS= -10

文件：240.23 Kbytes 页数：6 Pages

AOSMD

万国半导体

low power consumption cpu

文件：214.82 Kbytes 页数：2 Pages

AAEON

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