P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

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AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

文件：517.76 Kbytes 页数：7 Pages

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MOSFET：P-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

丝印：3**；Package：SOT-323；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

文件：517.76 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商