P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS complian

文件：153.3 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS complian

文件：153.3 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=-150V * Collector Dissipation: Pc(max)=625mW * High current gain APPLICATIONS * Telephone Switching Circuit * Amplifier

文件：185.52 Kbytes 页数：2 Pages

AVICTEK

10/100/1000BASE-T GIGABIT ETHERNET TRANSCEIVER

文件：120.44 Kbytes 页数：2 Pages

BOARDCOM

博通

PNP Epitaxial Planar Transistor

文件：378.74 Kbytes 页数：2 Pages

SECOS

喜可士