Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5804E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5804E and AO5804EL are electrically identical. -RoHS Complia

文件：206.98 Kbytes 页数：5 Pages

AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

1C 18 SOLID BCCS FOAM PE, OAS PE (FLOODED) PVC RG-6/U TYPE COAXIAL CABLE

1C 18 SOLID BCCS FOAM PE, OAS PE (FLOODED) PVC RG-6/U TYPE COAXIAL CABLE

文件：32.67 Kbytes 页数：1 Pages

GENERAL

通用电缆

CPH5804

文件：62.45 Kbytes 页数：5 Pages

SANYO

三洋

CONTENTS

文件：5.88919 Mbytes 页数：24 Pages

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