Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pb free (meets ROHS & Sony 259 specifications). AO4816L is a Green Produc

文件：135.52 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

文件：1.88645 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pb free (meets ROHS & Sony 259 specifications). AO4816L is a Green Produc

文件：135.52 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pb free (meets ROHS & Sony 259 specifications).\nAO4816L is a Green Product orde VDS (V) = 30V\nID = 8.5A\nRDS(ON) < 17mΩ (VGS = 20V)\nRDS(ON) < 20mΩ (VGS = 10V)\nRDS(ON) < 46mΩ (VGS = 4.5V);

AOS

美国万代