零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
AO4832 | Dual N-Channel MOSFET ■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | |
AO4832 | Dual N-Channel Enhancement Mode Power MOSFET RDs(ON)=16mQ@VGS=10V RDS(ON)=20mQ@VGS=4.5V SuperhighdensitycelldesignforextremelylowRDs(ON) Exceptionalon-resistanceandmaximumDCcurrent capability | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | |
AO4832 | 30V N-Channel MOSFET ProductSummary VDS30V ID(atVGS=10V)10A RDS(ON)(atVGS=10V) | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW | |
AO4832 | 30V Dual N-Channel MOSFET GeneralDescription TheAO4832usesadvancedtrenchtechnologytoprovide excellentRDS(ON)withlowgatecharge. ThisdeviceissuitableforhighsideswitchinSMPSand generalpurposeapplications. ProductSummary VDS30V ID(atVGS=10V)10A RDS(ON)(atVGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | |
AO4832 | Dual N-channel Enhancement Mode Power MOSFET Features VDS=30V,ID=12A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | |
AO4832 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAO4832usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO4832isPb-free(meetsROHS&Sony259sp | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | |
AO4832 | N-Channel 0-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | |
AO4832 | 30V Dual N-Channel MOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | |
Dual N-Channel MOSFET ■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAO4832usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO4832isPb-free(meetsROHS&Sony259sp | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
30V Dual N-Channel MOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD |
详细参数
- 型号:
AO4832
- 功能描述:
MOSFET 2N-CH 30V 10A 8SOIC
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 阵列
- 系列:
-
- 产品目录绘图:
8-SOIC Mosfet Package
- 标准包装:
1
- 系列:
- FET
- 型:
2 个 N 沟道(双) FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
60V 电流 - 连续漏极(Id) @ 25°
- C:
3A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
75 毫欧 @ 4.6A,10V Id 时的
- Vgs(th)(最大):
3V @ 250µA 闸电荷(Qg) @
- Vgs:
20nC @ 10V 输入电容(Ciss) @
- Vds:
- 功率 -
- 最大:
1.4W
- 安装类型:
表面贴装
- 封装/外壳:
PowerPAK? SO-8
- 供应商设备封装:
PowerPAK? SO-8
- 包装:
Digi-Reel®
- 产品目录页面:
1664(CN2011-ZH PDF)
- 其它名称:
SI7948DP-T1-GE3DKR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AOS美国万代 |
24+ |
SOP-8 |
888000 |
AOS代理商 优势供应美国万代AOS全系列 |
询价 | ||
AOS |
2016+ |
SOP8 |
4097 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
AOS |
1921++ |
SOP-8 |
24000 |
原厂AOS渠道,代理长期排单 |
询价 | ||
AOS/万代 |
2019+ |
SOP8 |
18000 |
原厂渠道 可含税出货 |
询价 | ||
AOS/万代 |
23+ |
SOP8 |
24369 |
诚心经营 原盒原标 正品现货 价格美丽假一罚十 |
询价 | ||
AOS |
23+ |
SOIC-8 |
10000 |
只做原装现货 假一赔万 |
询价 | ||
AOS |
23+ |
SOP8 |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
AOS/万代 |
2021+ |
SOP8 |
12000 |
勤思达 只做原装正品 现货供应 |
询价 | ||
UMW 友台 |
23+ |
SOP-8 |
27000 |
原装正品,实单请联系 |
询价 | ||
AOS/万代 |
20+ |
SO-8 |
120000 |
原装正品 可含税交易 |
询价 |
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