P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4705 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4705 is Pb-free (meets ROHS & Sony 259 specifications). AO4705

文件：125.49 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：4705；Package：SOP-8；P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -10 A (VGS = -10V) ● RDS(ON)

文件：1.78989 Mbytes 页数：5 Pages

KEXIN

科信电子

MOSFET：P-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4705 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4705 is Pb-free (meets ROHS & Sony 259 specifications). AO4705

文件：125.49 Kbytes 页数：5 Pages

AOSMD

万国半导体