N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM The AO4706 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary

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AOSMD

万国半导体

丝印：4706；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 16.5 A (VGS = 10V) ● RDS(ON)

文件：1.93159 Mbytes 页数：4 Pages

KEXIN

科信电子

30V N-Channel MOSFET

文件：213.01 Kbytes 页数：6 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

30V N-Channel MOSFET

文件：213.01 Kbytes 页数：6 Pages

AOSMD

万国半导体