Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirection

文件：110.76 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4801；Package：SOP-8；Dual P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -5 A (VGS = -10V) ● RDS(ON)

文件：1.56848 Mbytes 页数：4 Pages

KEXIN

科信电子

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05549 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

30V P-Channel MOSFET

文件：279.66 Kbytes 页数：5 Pages

AOSMD

万国半导体

P沟道MOSFET (8V - 60V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。

AOS

美国万代

30V P+P MOSFET

JGSEMI

台湾金锆

30V Dual P-ch Fast Switching MOSFET

MTW

美台微

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05522 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4801A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free (meets ROHS & Sony 259 specifications) Features VDS (V) = -30V

文件：127.18 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4801A；Package：SOP-8；Dual P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -5 A (VGS = -10V) ● RDS(ON)

文件：1.86107 Mbytes 页数：4 Pages

KEXIN

科信电子